Description: The N -MBE is designed for providing (In, Ga, Al) – N semiconductor wafer epitaxy services
·VEECO GEN-930 MBE
·In, Ga, Effusion cells, Al SUMO cells
·N plasma source with RF generator
·Fully automated N gas delivery system
·High temperature substrate heater (1200°C)
·Si, and Mg cells for doping
·Up to 3″ diameter wafers
·Growth control — MOLLY
·100 a.mu. RGA
·RHEED and KSA400 software for in-situsurface monitoring and analysis
